28 nm HKMG-Based Current Limited FeFET Crossbar-Array for Inference Application

This article reports a novel ferroelectric field-effect transistor (FeFET)-based crossbar array cascaded with an external resistor. The resistor is shunted the column of FeFET array, as current limiter and reduces impact variations in drain ( ${I}_{d}$ ), especially low threshold voltage (LVT) state. We have designed arrays notation="LaTeX">$8\times8$ sizes performed multiply-and-accumulate (MAC) operations. Furthermore, we evaluated performance limited system-level applications. Finally, evaluation was done by neuromorphic simulation resistor-shunted array. achieved software-comparable inference accuracy (~97%) for National Institute Standards Technology (MNIST) datasets multilayer perceptron (MLP) neural network, whereas built solely FeFETs failed to learn, yielding only 9.8% accuracy.